Growth of type I superlattice III-V heterostructure in horizontal nanowires enclosed in a silicon oxide template

Template assisted selective epitaxy (TASE) offers an attractive monolithic integration route for III-V semiconductors on Si, benefitting from reduced defect density and versatility in its employment to create various electronic photonic devices. This work achieves compositional morphological control of lattice matched InGaAs quantum wells embedded a horizontal InP nanowire grown directly Si seed the respective heterointerfaces. A series growth experiments introducing variations precursor switching sequence recipe, subsequent scanning transmission electron microscopy energy dispersive X-ray spectroscopy analysis, were employed characterize type I superlattice enclosed silicon oxide template.